Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devices

Quasi-1D chalcogenides have shown great promises in the development of emerging photovoltaic technologies. However, most quasi-1D semiconductors other than Sb2Se3 and Sb2S3 been seldom investigated for energy generation applications. Indeed, cationic or anionic alloying strategies allow changing bandgap these materials, opening door to an extended range with tuneable optical electrical properties. In this work, Bi incorporation into structure has proved as effective approach modulate between <1.0 eV 1.3 eV, demonstrating conversion efficiencies 3 5% 0.01 < x ? 0.10. there is a noticeable deterioration optoelectronic parameters > 0.1. order better understand underlying mechanisms leading formation (Sb1-xBix)2Se3, thus design specific enhance its properties, thin films different annealing time temperature synthesized characterized. Interestingly, it observed that Bi2Se3 are formed first, melting at 300 °C diffusing rapidly towards surface film. At higher temperature, binary compounds combine form solid solution, however dwell increases, (Sb1-xBix)2Se3 decomposes again Sb. This study material essentially limited by compositional disorder recombination via defects. Likewise, routes proposed improve morphology uniformity layer, achieving 1% 0.2.